IXTX200N10L2 - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXTX200N10L2 IXYS
IXTX200N10L2

IXYS

MOSFET N-CH 100V 200A PLUS247-3

IXTX200N10L2 is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 100V 200A PLUS247-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3 Variant.

In Stock: 6,461

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs540 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds23000 pF @ 25 V
FET Feature-
Power Dissipation (Max)1040W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3 Variant

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