Name: IXTU1R4N60P
Brand: IXYS
SKU: IXTU1R4N60P
Availability: InStock

REF: IXTU1R4N60P IXYS

IXTU1R4N60P

MOSFET N-CH 600V 1.4A TO251

IXTU1R4N60P is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 600V 1.4A TO251. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

Datasheet Request a Quote

In Stock: 1,553

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	5.2 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251AA
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA