IXTQ200N10T - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXTQ200N10T IXYS
IXTQ200N10T

IXYS

MOSFET N-CH 100V 200A TO3P

IXTQ200N10T is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 100V 200A TO3P. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-3P-3, SC-65-3.

In Stock: 6,876

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs152 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds9400 pF @ 25 V
FET Feature-
Power Dissipation (Max)550W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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