Name: IXTP8N65X2M
Brand: IXYS
SKU: IXTP8N65X2M
Price: 3.00 USD
Availability: InStock

REF: IXTP8N65X2M IXYS

IXTP8N65X2M

MOSFET N-CH 650V 4A TO220

IXTP8N65X2M is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 650V 4A TO220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 2,515

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	32W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3