Name: IXTP3N110
Brand: IXYS
SKU: IXTP3N110
Availability: InStock

REF: IXTP3N110 IXYS

IXTP3N110

MOSFET N-CH 1100V 3A TO220AB

IXTP3N110 is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 1100V 3A TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

Datasheet Request a Quote

In Stock: 1,672

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1100 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1350 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3