IXTP2R4N50P - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXTP2R4N50P IXYS
IXTP2R4N50P

IXYS

MOSFET N-CH 500V 2.4A TO220AB

IXTP2R4N50P is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 500V 2.4A TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 3,261

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.75Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs6.1 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds240 pF @ 25 V
FET Feature-
Power Dissipation (Max)55W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

Need a Quote for IXTP2R4N50P?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →