IXTP18P10T - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXTP18P10T IXYS
IXTP18P10T

IXYS

MOSFET P-CH 100V 18A TO220AB

IXTP18P10T is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET P-CH 100V 18A TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 7,302

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs120mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds2100 pF @ 25 V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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