IXTP18N60PM - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXTP18N60PM IXYS
IXTP18N60PM

IXYS

MOSFET N-CH 600V 9A TO220

IXTP18N60PM is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 600V 9A TO220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, Isolated Tab.

In Stock: 8,907

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs420mOhm @ 9A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 25 V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Isolated Tab
Package / CaseTO-220-3 Full Pack, Isolated Tab

Need a Quote for IXTP18N60PM?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →