Name: IXTI10N60P
Brand: IXYS
SKU: IXTI10N60P
Availability: InStock

REF: IXTI10N60P IXYS

IXTI10N60P

MOSFET N-CH 600V 10A TO262

IXTI10N60P is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 600V 10A TO262. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

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In Stock: 4,813

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1610 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262 (I2PAK)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA