IXTH64N65X - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXTH64N65X IXYS
IXTH64N65X

IXYS

MOSFET N-CH 650V 64A TO247

IXTH64N65X is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 650V 64A TO247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

In Stock: 2,756

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs51mOhm @ 32A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs143 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds5500 pF @ 25 V
FET Feature-
Power Dissipation (Max)890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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