Name: IXTH2N150
Brand: IXYS
SKU: IXTH2N150
Price: 10.81 USD
Availability: InStock

REF: IXTH2N150 IXYS

IXTH2N150

DISCMOSFET N-CH STD-HIVOLTAGE TO

IXTH2N150 is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. DISCMOSFET N-CH STD-HIVOLTAGE TO. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

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In Stock: 6,424

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1500 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	830 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXTH)
Package / Case	TO-247-3