IXTH1N170DHV - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXTH1N170DHV IXYS
IXTH1N170DHV

IXYS

MOSFET N-CH 1700V 1A TO247HV

IXTH1N170DHV is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 1700V 1A TO247HV. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3 Variant.

In Stock: 14

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1700 V
Current - Continuous Drain (Id) @ 25°C1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)0V
Rds On (Max) @ Id, Vgs16Ohm @ 500mA, 0V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3090 pF @ 25 V
FET FeatureDepletion Mode
Power Dissipation (Max)290W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247HV
Package / CaseTO-247-3 Variant

Need a Quote for IXTH1N170DHV?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →