IXTH120N20X4 - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXTH120N20X4 IXYS
IXTH120N20X4

IXYS

MOSFET

IXTH120N20X4 is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3.

In Stock: 6,837

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs108 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6100 pF @ 25 V
FET Feature-
Power Dissipation (Max)417W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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