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IXTF6N200P3

In Stock: 6,226
IXTF6N200P3 - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXTF6N200P3 IXYS
IXTF6N200P3

IXYS

MOSFET N-CH 2000V 4A I4PAC

IXTF6N200P3 is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 2000V 4A I4PAC. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case ISOPLUSi5-Pak™.

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In Stock: 6,226

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)2000 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs143 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3700 pF @ 25 V
FET Feature-
Power Dissipation (Max)215W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS i4-PAC™
Package / CaseISOPLUSi5-Pak™

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