Name: IXTD4N80P-3J
Brand: IXYS
SKU: IXTD4N80P-3J
Availability: InStock

REF: IXTD4N80P-3J IXYS

IXTD4N80P-3J

MOSFET N-CH 800V 3.6A DIE

IXTD4N80P-3J is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 800V 3.6A DIE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case Die.

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In Stock: 8,213

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id	5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	14.2 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	750 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die