Name: IXTD1R4N60P 11
Brand: IXYS
SKU: IXTD1R4N60P 11
Availability: InStock

REF: IXTD1R4N60P 11 IXYS

IXTD1R4N60P 11

MOSFET N-CH 600V 1.4A DIE

IXTD1R4N60P 11 is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 600V 1.4A DIE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case Die.

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In Stock: 7,363

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	5.2 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die