Name: IXTA6N100D2
Brand: IXYS
SKU: IXTA6N100D2
Price: 7.94 USD
Availability: InStock

REF: IXTA6N100D2 IXYS

IXTA6N100D2

MOSFET N-CH 1000V 6A TO263

IXTA6N100D2 is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 1000V 6A TO263. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 7,031

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 5 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2650 pF @ 25 V
FET Feature	Depletion Mode
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263AA
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB