Name: IXTA2R4N120P
Brand: IXYS
SKU: IXTA2R4N120P
Price: 6.85 USD
Availability: InStock

REF: IXTA2R4N120P IXYS

IXTA2R4N120P

MOSFET N-CH 1200V 2.4A TO263

IXTA2R4N120P is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 1200V 2.4A TO263. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 6,204

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1207 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263AA
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB