Name: IXTA10N60P
Brand: IXYS
SKU: IXTA10N60P
Price: 4.06 USD
Availability: InStock

REF: IXTA10N60P IXYS

IXTA10N60P

MOSFET N-CH 600V 10A TO263

IXTA10N60P is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 600V 10A TO263. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Datasheet Request a Quote

In Stock: 7,073

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1610 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263AA
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB