Name: IXSQ20N60B2D1
Brand: IXYS
SKU: IXSQ20N60B2D1
Availability: InStock

REF: IXSQ20N60B2D1 IXYS

IXSQ20N60B2D1

IGBT 600V 35A 190W TO3P

IXSQ20N60B2D1 is a Transistors - IGBTs - Single manufactured by IXYS. IGBT 600V 35A 190W TO3P. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-3P-3, SC-65-3, current - collector (ic) (max) 35 A.

Datasheet Request a Quote

In Stock: 2,361

Specifications

17 parameters

Product Status	Obsolete
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	35 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 16A
Power - Max	190 W
Switching Energy	380µJ (off)
Input Type	Standard

Gate Charge	33 nC
Td (on/off) @ 25°C	30ns/116ns
Test Condition	-
Reverse Recovery Time (trr)	30 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P