IXKC19N60C5 - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXKC19N60C5 IXYS
IXKC19N60C5

IXYS

MOSFET N-CH 600V 19A ISOPLUS220

IXKC19N60C5 is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 600V 19A ISOPLUS220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case ISOPLUS220™.

In Stock: 4,057

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 16A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 100 V
FET FeatureSuper Junction
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS220™
Package / CaseISOPLUS220™

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