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IXGM30N60

In Stock: 3,444
IXGM30N60 - IXYS - Transistors - IGBTs - Single
REF: IXGM30N60 IXYS
IXGM30N60

IXYS

POWER MOSFET TO-3

IXGM30N60 is a Transistors - IGBTs - Single manufactured by IXYS. POWER MOSFET TO-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-204AE, current - collector (ic) (max) 50 A.

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In Stock: 3,444

Specifications

17 parameters
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)100 A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Power - Max200 W
Switching Energy-
Input TypeStandard
Gate Charge180 nC
Td (on/off) @ 25°C100ns/500ns
Test Condition-
Reverse Recovery Time (trr)200 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AE
Supplier Device PackageTO-204AE

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