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IXFX26N90

In Stock: 5,431
IXFX26N90 - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXFX26N90 IXYS
IXFX26N90

IXYS

MOSFET N-CH 900V 26A PLUS 247

IXFX26N90 is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 900V 26A PLUS 247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3 Variant.

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In Stock: 5,431

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 13A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs240 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10800 pF @ 25 V
FET Feature-
Power Dissipation (Max)560W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3 Variant

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