IXFT10N100 - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXFT10N100 IXYS
IXFT10N100

IXYS

MOSFET N-CH 1000V 10A TO268

IXFT10N100 is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 1000V 10A TO268. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA.

In Stock: 2,552

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 5A, 10V
Vgs(th) (Max) @ Id4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs155 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4000 pF @ 25 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268AA
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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