IXFQ12N80P - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXFQ12N80P IXYS
IXFQ12N80P

IXYS

MOSFET N-CH 800V 12A TO3P

IXFQ12N80P is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 800V 12A TO3P. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-3P-3, SC-65-3.

In Stock: 9,335

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs850mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 25 V
FET Feature-
Power Dissipation (Max)360W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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