IXFP4N100Q - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXFP4N100Q IXYS
IXFP4N100Q

IXYS

MOSFET N-CH 1000V 4A TO220AB

IXFP4N100Q is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 1000V 4A TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 7,822

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1050 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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