IXFN82N60Q3 - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXFN82N60Q3 IXYS
IXFN82N60Q3

IXYS

MOSFET N-CH 600V 66A SOT227B

IXFN82N60Q3 is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 600V 66A SOT227B. Key specifications: mounting type Chassis Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-227-4, miniBLOC.

In Stock: 3,043

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs75mOhm @ 41A, 10V
Vgs(th) (Max) @ Id6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs275 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13500 pF @ 25 V
FET Feature-
Power Dissipation (Max)960W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

Need a Quote for IXFN82N60Q3?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →