IXFN32N100P - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXFN32N100P IXYS
IXFN32N100P

IXYS

MOSFET N-CH 1000V 27A SOT-227B

IXFN32N100P is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 1000V 27A SOT-227B. Key specifications: mounting type Chassis Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-227-4, miniBLOC.

In Stock: 950

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs225 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds14200 pF @ 25 V
FET Feature-
Power Dissipation (Max)690W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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