IXFH80N65X2-4 - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXFH80N65X2-4 IXYS
IXFH80N65X2-4

IXYS

MOSFET N-CH 650V 80A TO247-4L

IXFH80N65X2-4 is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 650V 80A TO247-4L. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-4.

In Stock: 55

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs38mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds8300 pF @ 25 V
FET Feature-
Power Dissipation (Max)890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

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