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IXFH26N65X2

In Stock: 3,312
IXFH26N65X2 - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXFH26N65X2 IXYS
IXFH26N65X2

IXYS

IXFH26N65X2

IXFH26N65X2 is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. IXFH26N65X2. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

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In Stock: 3,312

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2450 pF @ 25 V
FET Feature-
Power Dissipation (Max)460W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXFH)
Package / CaseTO-247-3

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