IXFH10N100P - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXFH10N100P IXYS
IXFH10N100P

IXYS

MOSFET N-CH 1000V 10A TO247AD

IXFH10N100P is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 1000V 10A TO247AD. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

In Stock: 4,634

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 5A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3030 pF @ 25 V
FET Feature-
Power Dissipation (Max)380W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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