IXFA4N100P - IXYS - Transistors - FETs, MOSFETs - Single
REF: IXFA4N100P IXYS
IXFA4N100P

IXYS

MOSFET N-CH 1000V 4A TO263

IXFA4N100P is a Transistors - FETs, MOSFETs - Single manufactured by IXYS. MOSFET N-CH 1000V 4A TO263. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

In Stock: 7,930

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1456 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXFA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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