Name: FII50-12E
Brand: IXYS
SKU: FII50-12E
Availability: InStock

REF: FII50-12E IXYS

FII50-12E

IGBT H BRIDGE 1200V 50A I4PAK5

FII50-12E is a Transistors - IGBTs - Arrays manufactured by IXYS. IGBT H BRIDGE 1200V 50A I4PAK5. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case i4-Pac™-5, current - collector (ic) (max) 50 A.

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In Stock: 7,114

Specifications

15 parameters

Product Status	Obsolete
IGBT Type	NPT
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Power - Max	200 W
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 30A
Current - Collector Cutoff (Max)	400 µA

Input Capacitance (Cies) @ Vce	2 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	i4-Pac™-5
Supplier Device Package	ISOPLUS i4-PAC™