BFS 17P E8211 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFS 17P E8211 Infineon Technologies
BFS 17P E8211

Infineon Technologies

RF TRANS NPN SOT23-3

BFS 17P E8211 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANS NPN SOT23-3. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 25mA.

In Stock: 8,669

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition1.4GHz
Noise Figure (dB Typ @ f)3.5dB @ 800MHz
Gain-
Power - Max280mW
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 2mA, 1V
Current - Collector (Ic) (Max)25mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23

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