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BFR949L3E6327

In Stock: 13,974
BFR949L3E6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFR949L3E6327 Infineon Technologies
BFR949L3E6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

BFR949L3E6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF BIPOLAR TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-101, SOT-883, current - collector (ic) (max) 50mA.

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In Stock: 13,974

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1dB ~ 2.5dB @ 1GHz
Gain21.5dB
Power - Max250mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 6V
Current - Collector (Ic) (Max)50mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackagePG-TSLP-3-1

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