BFR93AWE6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFR93AWE6327 Infineon Technologies
BFR93AWE6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

BFR93AWE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF BIPOLAR TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-70, SOT-323, current - collector (ic) (max) 90mA.

In Stock: 3,123

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition6GHz
Noise Figure (dB Typ @ f)1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain10.5dB ~ 15.5dB
Power - Max300mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 30mA, 8V
Current - Collector (Ic) (Max)90mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSOT-323

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