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BFR843EL3E6327XTSA1

In Stock: 30,000
BFR843EL3E6327XTSA1 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFR843EL3E6327XTSA1 Infineon Technologies
BFR843EL3E6327XTSA1

Infineon Technologies

RF TRANS NPN 2.6V TSLP-3-10

BFR843EL3E6327XTSA1 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANS NPN 2.6V TSLP-3-10. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 3-XFDFN, current - collector (ic) (max) 55mA.

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In Stock: 30,000

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)2.6V
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain25.5dB
Power - Max125mW
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)55mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case3-XFDFN
Supplier Device PackagePG-TSLP-3-10

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