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BFR193WE6327

In Stock: 6,839
BFR193WE6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFR193WE6327 Infineon Technologies
BFR193WE6327

Infineon Technologies

HIGH LINEARITY TRANSISTOR

BFR193WE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. HIGH LINEARITY TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-70, SOT-323, current - collector (ic) (max) 80mA.

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In Stock: 6,839

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain10.5dB ~ 16dB
Power - Max580mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 30mA, 8V
Current - Collector (Ic) (Max)80mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSOT-323

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