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BFR183E6327HTSA1

In Stock: 21,260
BFR183E6327HTSA1 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFR183E6327HTSA1 Infineon Technologies
BFR183E6327HTSA1

Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT23-3

BFR183E6327HTSA1 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANS NPN 12V 8GHZ SOT23-3. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 65mA.

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In Stock: 21,260

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain17.5dB
Power - Max450mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 15mA, 8V
Current - Collector (Ic) (Max)65mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23

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