RFQ List My Parts 0
Get a Quote Contact

BFR182E-6327

In Stock: 89,000
BFR182E-6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFR182E-6327 Infineon Technologies
BFR182E-6327

Infineon Technologies

RF N-CHANNEL MOSFET

BFR182E-6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF N-CHANNEL MOSFET. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 35mA.

Datasheet Request a Quote

In Stock: 89,000

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1.3dB @ 1.8GHz
Gain9.5dB
Power - Max250mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 8V
Current - Collector (Ic) (Max)35mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23

Related Products

MMBTH10LT1 - onsemi onsemi MMBTH10LT1 0.04000 RFQ MCH4021-TL-E - onsemi onsemi MCH4021-TL-E 0.12000 RFQ 2SC5750-T1-A - Renesas Electronics America Inc Renesas Electronics America Inc 2SC5750-T1-A 0.29000 RFQ 2SC6023-TR-E - onsemi onsemi 2SC6023-TR-E 0.06000 RFQ FH102A-TR-E - onsemi onsemi FH102A-TR-E 0.29000 RFQ BFU660F,115 - NXP USA Inc. NXP USA Inc. BFU660F,115 0.67000 RFQ

Manufacturers in Transistors - Bipolar (BJT) - RF

NXP USA Inc. Panjit International Inc. Micro Commercial Co Broadcom Limited Toshiba Semiconductor and Storage Central Semiconductor Corp NTE Electronics, Inc MACOM Technology Solutions Solid State Inc. Renesas CEL Sanyo

Need a Quote for BFR182E-6327?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Transistors - Bipolar (BJT) - RF
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →