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BFR181E6327

In Stock: 54,000
BFR181E6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFR181E6327 Infineon Technologies
BFR181E6327

Infineon Technologies

LOW-NOISE TRANSISTOR

BFR181E6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. LOW-NOISE TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 20mA.

Datasheet Request a Quote

In Stock: 54,000

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain18.5dB
Power - Max175mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 8V
Current - Collector (Ic) (Max)20mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23

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