BFP720FH6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFP720FH6327 Infineon Technologies
BFP720FH6327

Infineon Technologies

RF TRANSISTOR, X BAND, NPN

BFP720FH6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANSISTOR, X BAND, NPN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 4-SMD, Flat Leads, current - collector (ic) (max) 25mA.

In Stock: 219,000

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)4.7V
Frequency - Transition45GHz
Noise Figure (dB Typ @ f)1dB @ 10GHz
Gain15dB
Power - Max100mW
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 13mA, 3V
Current - Collector (Ic) (Max)25mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case4-SMD, Flat Leads
Supplier Device Package4-TSFP

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