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BFP640E6327

In Stock: 26,583
BFP640E6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFP640E6327 Infineon Technologies
BFP640E6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

BFP640E6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF BIPOLAR TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-82A, SOT-343, current - collector (ic) (max) 50mA.

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In Stock: 26,583

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)4.5V
Frequency - Transition40GHz
Noise Figure (dB Typ @ f)0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain24dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 30mA, 3V
Current - Collector (Ic) (Max)50mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-82A, SOT-343
Supplier Device PackagePG-SOT343-4

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