BFP420E6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFP420E6327 Infineon Technologies
BFP420E6327

Infineon Technologies

RF TRANSISTOR, X BAND, NPN

BFP420E6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANSISTOR, X BAND, NPN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-82A, SOT-343, current - collector (ic) (max) 35mA.

In Stock: 145,291

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5V
Frequency - Transition25GHz
Noise Figure (dB Typ @ f)1.1dB @ 1.8GHz
Gain21dB
Power - Max160mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 20mA, 4V
Current - Collector (Ic) (Max)35mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-82A, SOT-343
Supplier Device PackagePG-SOT343-4

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