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BFP196WE6327

In Stock: 32,200
BFP196WE6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFP196WE6327 Infineon Technologies
BFP196WE6327

Infineon Technologies

RF TRANSISTOR, L BAND, NPN

BFP196WE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANSISTOR, L BAND, NPN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-82A, SOT-343, current - collector (ic) (max) 150mA.

Datasheet Request a Quote

In Stock: 32,200

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition7.5GHz
Noise Figure (dB Typ @ f)1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain12.5dB ~ 19dB
Power - Max700mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 8V
Current - Collector (Ic) (Max)150mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-82A, SOT-343
Supplier Device PackagePG-SOT343-4

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