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BFP193E6327HTSA1

In Stock: 3,535
BFP193E6327HTSA1 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFP193E6327HTSA1 Infineon Technologies
BFP193E6327HTSA1

Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT143-4

BFP193E6327HTSA1 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANS NPN 12V 8GHZ SOT143-4. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-253-4, TO-253AA, current - collector (ic) (max) 80mA.

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In Stock: 3,535

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain12dB ~ 18dB
Power - Max580mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 30mA, 8V
Current - Collector (Ic) (Max)80mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-253-4, TO-253AA
Supplier Device PackagePG-SOT-143-3D

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