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BFP 640FESD E6327

In Stock: 8,657
BFP 640FESD E6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF
REF: BFP 640FESD E6327 Infineon Technologies
BFP 640FESD E6327

Infineon Technologies

RF TRANS NPN 4.7V 46GHZ 4TSFP

BFP 640FESD E6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANS NPN 4.7V 46GHZ 4TSFP. Key specifications: mounting type Surface Mount, package / case 4-SMD, Flat Leads, current - collector (ic) (max) 50mA, power - max 200mW.

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In Stock: 8,657

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)4.7V
Frequency - Transition46GHz
Noise Figure (dB Typ @ f)0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Gain8B ~ 30.5dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 30mA, 3V
Current - Collector (Ic) (Max)50mA
Operating Temperature-
Mounting TypeSurface Mount
Package / Case4-SMD, Flat Leads
Supplier Device Package4-TSFP

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