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RFP8P06LE

In Stock: 1,578
RFP8P06LE - Harris Corporation - Transistors - FETs, MOSFETs - Single
REF: RFP8P06LE Harris Corporation
RFP8P06LE

Harris Corporation

P-CHANNEL POWER MOSFET

RFP8P06LE is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. P-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

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In Stock: 1,578

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 5V
Rds On (Max) @ Id, Vgs300mOhm @ 8A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds675 pF @ 25 V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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