RFP10P15 - Harris Corporation - Transistors - FETs, MOSFETs - Single
REF: RFP10P15 Harris Corporation
RFP10P15

Harris Corporation

P-CHANNEL POWER MOSFET

RFP10P15 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. P-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 75,487

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 25 V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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