Name: RFP10N12L
Brand: Harris Corporation
SKU: RFP10N12L
Price: 1.07 USD
Availability: InStock

REF: RFP10N12L Harris Corporation

RFP10N12L

N-CHANNEL POWER MOSFET

RFP10N12L is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

Datasheet Request a Quote

In Stock: 54,904

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	300mOhm @ 5A, 5V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3